Solar Bommai - A school to have Acquaintance in Engineering

 

 

  Introduction Level of integrations in IC’s : Source: wikipedia  ULSI, WSI, SoC and 3D-IC Conductor - Low Resistance  SemiConductor - Resistance changes  Insulator - High Resistance     Karl Ferdinand Braun developed the crystal detector , the first semiconductor device , in 1874. SemiConductor A semiconductor material has an electrical conductivity value falling between that if a conductor , such as metallic copper, and an insulator , such as glass. Its conducting properties may be altered in useful ways by introducing impurities (" doping ") .  Semiconductor - Types Intrinsic (pure) Extrinsic (Doped) N type  Ptype     Intrinsic semiconductor Donor atoms (n-Type Semiconductor) Acceptor atoms (p-Type Semiconductor) Group IV semiconductors Silicon , Germanium Phosphorus , Arsenic , Antimony Boron , Aluminium , Gallium Group III–V semiconductors Aluminum phosphide , Aluminum arsenide , Gallium arsenide , Gallium nitride Selenium ...

 

 

  GaN, GaAs, and LDMOS: A Secure Place for All Parent Category: 2017 HFE By Tim Galla The rising presence of GaN has been hard to miss. It’s even been called “the technology that will displace all others,” and it not hard to see why: GaN offers the best combination of high power, gain, and efficiency while operating at high bias voltages that reduce current consumption. It also has the highest power density of any semiconductor material used for RF power generation and can operate over multi-octave bandwidths. That said, LDMOS and GaAs, its more mature competitors, aren’t likely to be run over by the GaN freight train any time soon, nor will GaN be the de-facto choice for every RF power application. To see why, it’s important to illustrate the strengths of each one that in large measure determine the applications for which they are best suited. LDMOS LDMOS technology has advanced continuously in the decades since it was first offered commercially. Current LDMOS RF power transistors...